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Infineon F3L100R07W2E3B11BOMA1 Transistor IGBT Module N-CH 650V 117A ±20V Screw Tray

ModelF3L100R07W2E3B11BOMA1
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IGBT Technology: IGBT 3 [Trench

IGBT Termination: Press Fit

Power Dissipation: 300

IGBT Configuration: 3-Level

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 117

Collector Emitter Voltage Max: 650

Collector Emitter Saturation Voltage: 1.45

Datasheet


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