Infineon F3L11MR12W2M1B65BOMA1 Transistor Silicon Carbide MOSFET Array Module Hexa N-CH 1200V AG-Easy2BM Tray
ManufacturerInfineon(View more products from this manufacturer)
ModelF3L11MR12W2M1B65BOMA1
Contact
Secure Checkout
Quality Engagement
Easy change and return
Delivery Available
Channel Type: Dual N Channel
Power Dissipation: 20
Transistor Case Style: Module
Drain Source Voltage Vds: 1.2
Operating Temperature Max: 150 °C
Continuous Drain Current Id: 100
Mosfet Module Configuration: Full Bridge
Drain Source On State Resistance: 11.3
Gate Source Threshold Voltage Max: 5.55
Stay Updated with Offers
Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Quick Support
Direct access to our certified experts