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Fall Time: 18.5 ns
Rise Time: 23.4 ns
Technology: SiC
Configuration: 3-Phase
Mounting Style: Press Fit
Transistor Polarity: N-Channel
Vf - Forward Voltage: 4.6 V
Vr - Reverse Voltage: 1.2 kV
Pd - Power Dissipation: 20 mW (1/50 W)
Vgs - Gate-Source Voltage: - 10 V, + 20 V
Typical Turn-On Delay Time: 26.7 ns
Typical Turn-Off Delay Time: 82.9 ns
Id - Continuous Drain Current: 100 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Rds On - Drain-Source Resistance: 11.3 mOhms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 5.55 V
