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Infineon F475R07W2H3B51BPSA1 LOW POWER EASY

ModelF475R07W2H3B51BPSA1
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IGBT Termination: Press Fit

Power Dissipation: 250

IGBT Configuration: H Bridge

Transistor Mounting: Clamp Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 75

Collector Emitter Voltage Max: 650

Collector Emitter Saturation Voltage: 1.35

Datasheet


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