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Infineon FD16001200R17HP4B2BOSA2 IGBTs

ModelFD16001200R17HP4B2BOSA2
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IGBT Technology: IGBT 4

IGBT Termination: Stud

Power Dissipation: 10.5

IGBT Configuration: Dual, Brake-Ch

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 1.6

Collector Emitter Voltage Max: 1.7

Collector Emitter Saturation Voltage: 1.9

Datasheet


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