Infineon FD600R17KE3_B2 IGBT Silicon Modules N-CH 1.7KV 950A
ManufacturerInfineon(View more products from this manufacturer)
ModelFD600R17KE3_B2
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Width: 130 mm
Height: 38 mm
Length: 140 mm
Technology: Si
Unit Weight: 1.05 kg
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 4.3 kW
Gate-Emitter Leakage Current: 400 nA
Maximum Gate Emitter Voltage: 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.7 kV
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 950 A
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