Infineon FF450R12KE4EHOSA1 Transistor IGBT Module N-CH 1200V 520A ±20V Screw Tray
ManufacturerInfineon(View more products from this manufacturer)
ModelFF450R12KE4EHOSA1
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IGBT Technology: IGBT 4 [Trench
IGBT Termination: Stud|Tab
Power Dissipation: 2.4
IGBT Configuration: Dual Common Em
Transistor Mounting: Screw Mount
Transistor Case Style: Module
Operating Temperature Max: 150 °C
Continuous Collector Current: 520
Collector Emitter Voltage Max: 1.2
Collector Emitter Saturation Voltage: 1.75
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