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Infineon FF900R12IE4BOSA1 Trans IGBT Module N-CH 1.2KV 900A 10-pin PRIME2-1

ModelFF900R12IE4BOSA1
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IGBT Technology: IGBT 4 [Trench

IGBT Termination: Stud

Power Dissipation: 5.1

IGBT Configuration: Dual

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 900

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.75

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