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Infineon FP25R12KE3BPSA1 IGBT Silicon Modules 1200 V, 25 A PIM three phase input rectifier IGBT module

Technology: Si

Configuration: 3-Phase Inverter

Pd - Power Dissipation: 155 W

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 40 A

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