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Infineon FS45MR12W1M1PB11BPSA1 Transistor Silicon Carbide MOSFET Array Module Hexa N-CH 1200V AG-Easy1BM Tray

ModelFS45MR12W1M1PB11BPSA1
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Channel Type: Hex N Channel

Power Dissipation: 20

Transistor Case Style: Module

Drain Source Voltage Vds: 1.2

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 25

Mosfet Module Configuration: SixPack

Drain Source On State Resistance: 45

Gate Source Threshold Voltage Max: 5.55

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