Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Fall Time: 5.2 ns
Rise Time: 3.7 ns
Technology: GaN-on-Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: GS665MB--EVB, GS66508T-EVBDB2
Transistor Type: E-Mode
Qg - Gate Charge: 6.1 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 7 V
Typical Turn-On Delay Time: 4.1 ns
Maximum Operating Frequency: > 10 MHz
Minimum Operating Frequency: 0 Hz
Typical Turn-Off Delay Time: 8 ns
Id - Continuous Drain Current: 30 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 63 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
