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Fall Time: 22 ns
Rise Time: 12.4 ns
Technology: GaN-on-Si
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Development Kit: GSP65RXXHB-EVB, GSP665x-EVBIMS2
Transistor Type: E-Mode
Qg - Gate Charge: 14.2 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 10 V, + 7 V
Typical Turn-On Delay Time: 4.6 ns
Maximum Operating Frequency: > 10 MHz
Minimum Operating Frequency: 0 Hz
Typical Turn-Off Delay Time: 14.9 ns
Id - Continuous Drain Current: 60 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 32 mOhms
Vds - Drain-Source Breakdown Voltage: 650 V
Vgs th - Gate-Source Threshold Voltage: 1.1 V
