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Infineon IFS75B12N3E4B31BOSA1 MIPAQ Base Module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 Diode and Curr

ModelIFS75B12N3E4B31BOSA1
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IGBT Technology: IGBT 4 [Trench

IGBT Termination: Solder

Power Dissipation: 385

IGBT Configuration: Six Pack

Transistor Mounting: Screw Mount

Transistor Case Style: Module

Operating Temperature Max: 150 °C

Continuous Collector Current: 75

Collector Emitter Voltage Max: 1.2

Collector Emitter Saturation Voltage: 1.85

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