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Infineon IGB50N65S5ATMA1 IGBT, 80 A, 1.35 V, 270 W, 650 V, TO-263 (D2PAK), 3 Pins | EMIN.COM.MM

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Infineon IGB50N65S5ATMA1 IGBT, 80 A, 1.35 V, 270 W, 650 V, TO-263 (D2PAK), 3 Pins

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Infineon IGB50N65S5ATMA1 IGBT, 80 A, 1.35 V, 270 W, 650 V, TO-263 (D2PAK), 3 Pins

ManufacturerInfineon(View more products from this manufacturer)

ModelIGB50N65S5ATMA1

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No. of Pins: 3

Power Dissipation: 270

Transistor Mounting: Surface Mount

Transistor Case Style: TO-263 (D2PAK)

Operating Temperature Max: 175 °C

Continuous Collector Current: 80

Collector Emitter Voltage Max: 650

Collector Emitter Saturation Voltage: 1.35

Datasheet

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