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Infineon IGLR65R200D2XUMA1 GaN Transistor HV GAN DISCRETES | EMIN.COM.MM

GaN FETs
Infineon IGLR65R200D2XUMA1 GaN Transistor HV GAN DISCRETES

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Infineon IGLR65R200D2XUMA1 GaN Transistor HV GAN DISCRETES

ManufacturerInfineon(View more products from this manufacturer)

ModelIGLR65R200D2XUMA1

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Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N-Channel

Qg - Gate Charge: 1.8 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 33 W

Vgs - Gate-Source Voltage: - 10 V

Id - Continuous Drain Current: 9.2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 240 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V

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