Infineon IKD04N60RC2ATMA1 IGBT Transistors 600 V, 4 A IGBT Discrete with Reverse Conducting Drive 2-diode in TO-252 package
Manufacturer: Infineon Model: IKD04N60RC2ATMA1 - Contact
Technology: Si
REACH - SVHC: Details
Configuration: Single
Mounting Style: SMD/SMT
Pd - Power Dissipation: 36.6 W
Gate-Emitter Leakage Current: 100 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2 V
Continuous Collector Current at 25 C: 8 A
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