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Infineon IMLT65R050M2HXTMA1 SiC MOSFETS SILICON CARBIDE MOSFET | EMIN.COM.MM

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Infineon IMLT65R050M2HXTMA1 SiC MOSFETS SILICON CARBIDE MOSFET

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Infineon IMLT65R050M2HXTMA1 SiC MOSFETS SILICON CARBIDE MOSFET

ManufacturerInfineon(View more products from this manufacturer)

ModelIMLT65R050M2HXTMA1

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Technology: SiC

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Rds On - Drain-Source Resistance: 50 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

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