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Infineon IMZA65R048M1HXKSA1 Silicon Carbide MOSFET, Single, N Channel, 39 A, 650 V, 64 Milliohms, TO-247, 4 Pins

ModelIMZA65R048M1HXKSA1
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No. of Pins: 4

Channel Type: N Channel

Power Dissipation: 125

Transistor Case Style: TO-247

Drain Source Voltage Vds: 650

Operating Temperature Max: 150 °C

Continuous Drain Current Id: 39

Mosfet Module Configuration: Single

Drain Source On State Resistance: 64

Gate Source Threshold Voltage Max: 5.7

Datasheet


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