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Fall Time: 8.4 ns
Rise Time: 16.5 ns
Technology: SiC
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Qg - Gate Charge: 370 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 1.249 kW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 49.5 ns
Typical Turn-Off Delay Time: 215.2 ns
Id - Continuous Drain Current: 288 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 7 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 4.7 V
