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Width: 5.05 mm
Height: 0.7 mm
Length: 6.35 mm
Fall Time: 58 ns
Rise Time: 70 ns
Technology: Si
Unit Weight: 500 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Qg - Gate Charge: 123 nC
Moisture Sensitive: Yes
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 96 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 21 ns
Typical Turn-Off Delay Time: 68 ns
Id - Continuous Drain Current: 217 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 370 S
Rds On - Drain-Source Resistance: 1.2 mOhms
Vds - Drain-Source Breakdown Voltage: 40 V
Vgs th - Gate-Source Threshold Voltage: 3 V
