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Technology: Si
Unit Weight: 1.204 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: P-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 4 V
Drain-Source Current at Vgs=0: - 10 mA
Id - Continuous Drain Current: 5 mA
Forward Transconductance - Min: 25 mS
Vgs - Gate-Source Breakdown Voltage: - 30 V
Vds - Drain-Source Breakdown Voltage: - 10 V
