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Technology: Si
Unit Weight: 4.885 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Gate-Source Cutoff Voltage: - 3 V
Drain-Source Current at Vgs=0: 10 mA
Id - Continuous Drain Current: 100 uA
Forward Transconductance - Min: 25 mS
Vgs - Gate-Source Breakdown Voltage: - 20 V
Vds - Drain-Source Breakdown Voltage: 10 V
