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Technology: Si
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: - 500 mV to - 2.5 V
Drain-Source Current at Vgs=0: 10 mA
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 2 mS
Vgs - Gate-Source Breakdown Voltage: - 50 V
