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Technology: Si
Unit Weight: 453.600 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 1.8 V
Drain-Source Current at Vgs=0: 90 uA
Forward Transconductance - Min: 210 uS
Vgs - Gate-Source Breakdown Voltage: 40 V
Vds - Drain-Source Breakdown Voltage: 10 V
