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Technology: Si
Unit Weight: 2.131 g
Configuration: Dual
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 500 mW (1/2 W)
Gate-Source Cutoff Voltage: - 4 V
Drain-Source Current at Vgs=0: 30 mA
Id - Continuous Drain Current: 1 nA
Forward Transconductance - Min: 10 mS
Vgs - Gate-Source Breakdown Voltage: - 25 V
Vds - Drain-Source Breakdown Voltage: 10 V
