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Technology: Si
Unit Weight: 1.884 g
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 7 V
Rds On - Drain-Source Resistance: 600 Ohms
Vgs - Gate-Source Breakdown Voltage: 15 V
Vds - Drain-Source Breakdown Voltage: 10 V
