Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Technology: Si
Unit Weight: 415.759 mg
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: N-Channel
Pd - Power Dissipation: 300 mW
Gate-Source Cutoff Voltage: 5 V
Rds On - Drain-Source Resistance: 8 kOhms
Vgs - Gate-Source Breakdown Voltage: 15 V
Vds - Drain-Source Breakdown Voltage: 10 V
