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Technology: Si
Unit Weight: 8 mg
Channel Mode: Depletion
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 400 mW
Vgs - Gate-Source Voltage: - 15 V, + 15 V
Id - Continuous Drain Current: 20 mA
Maximum Operating Temperature: + 110 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 380 Ohms
Vds - Drain-Source Breakdown Voltage: 800 V
Vgs th - Gate-Source Threshold Voltage: 3.1 V
