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IXYS FII24N17AH1S IGBT Transistors 11.5 Amps 1700V 5.2 Rds | EMIN.COM.MM

IGBTs
IXYS FII24N17AH1S IGBT Transistors 11.5 Amps 1700V 5.2 Rds

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IXYS FII24N17AH1S IGBT Transistors 11.5 Amps 1700V 5.2 Rds

ManufacturerIXYS(View more products from this manufacturer)

ModelFII24N17AH1S

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Technology: Si

Configuration: Dual

Mounting Style: Through Hole

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Continuous Collector Current at 25 C: 18 A

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