IXYS IXA33IF1200HB IGBT Transistors XPT IGBT Copack
Manufacturer: IXYS Model: IXA33IF1200HB - Contact
Technology: Si
Unit Weight: 38 g
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Pd - Power Dissipation: 250 W
Gate-Emitter Leakage Current: 500 nA
Maximum Gate Emitter Voltage: - 20 V, 20 V
Maximum Operating Temperature: + 125 C
Minimum Operating Temperature: - 40 C
Collector- Emitter Voltage VCEO Max: 1.2 kV
Continuous Collector Current Ic Max: 34 A
Collector-Emitter Saturation Voltage: 1.8 V
Continuous Collector Current at 25 C: 58 A
- Quality Engagement
- Easy change and return
- Delivery Avaliable
- Favorable payment