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Width: 4.83 mm
Height: 16 mm
Length: 10.66 mm
Fall Time: 14 ns
Rise Time: 11 ns
Technology: Si
Unit Weight: 2 g
Channel Mode: Enhancement
Mounting Style: Through Hole
Qg - Gate Charge: 92 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 250 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Typical Turn-On Delay Time: 24 ns
Typical Turn-Off Delay Time: 60 ns
Id - Continuous Drain Current: 6 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3 S
Rds On - Drain-Source Resistance: 2.75 Ohms
Vds - Drain-Source Breakdown Voltage: 1.2 kV
Vgs th - Gate-Source Threshold Voltage: 5 V
