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IXYS IXTH50N25T MOSFETs Trench Gate Power MOSFET

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Id - Continuous Drain Current: 50 A

Rds On - Drain-Source Resistance: 60 mOhms

Vds - Drain-Source Breakdown Voltage: 250 V

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