IXYS IXTN550N055T2 Trench GigaMOS Trench T2 HiperFET PWR MOSFET

Fall Time: 230 ns

Rise Time: 40 ns

Technology: Si

Unit Weight: 30 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Screw Mount

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 27.5 V

Pd - Power Dissipation: 940 W

Vgs - Gate-Source Voltage: - 20 V, + 20 V

Typical Turn-On Delay Time: 45 ns

Typical Turn-Off Delay Time: 90 ns

Id - Continuous Drain Current: 550 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 1.3 mOhms

Vds - Drain-Source Breakdown Voltage: 55 V

Vgs th - Gate-Source Threshold Voltage: 4 V