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Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 240 nC
Number of Channels: 1 Channel
Transistor Polarity: P-Channel
Pd - Power Dissipation: 890 W
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 170 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 58 S/35 S
Rds On - Drain-Source Resistance: 12 mOhms
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs th - Gate-Source Threshold Voltage: 4 V
