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Speed: 25 ns
Memory Size: 4 Gbit
Memory Type: NAND
Timing Type: Synchronous
Architecture: Block Erase
Organization: 512 M x 8
Data Bus Width: 8 bit
Interface Type: Parallel
Mounting Style: SMD/SMT
Moisture Sensitive: Yes
Supply Current - Max: 30 mA
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 2.7 V
Active Read Current - Max: 30 mA
Maximum Operating Temperature: + 85 C
Minimum Operating Temperature: - 40 C
