Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 4 V
Vgs (Max): 20V
Gate Charge (Qg): 430nC
Power consumption: 1000W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 100V
Continuous drain current: 320A
Input Capacitance (Ciss): 26000pF
Operating temperature range: -55 to 175C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 3.5mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
