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Gain: 12 dB
Technology: GaN
Unit Weight: 32.095 g
Output Power: 240 W
Mounting Style: Screw Mount
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Pd - Power Dissipation: 345 W
Maximum Operating Frequency: 3.1 GHz
Minimum Operating Frequency: 2.7 GHz
Id - Continuous Drain Current: 24 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 120 V
Vgs th - Gate-Source Threshold Voltage: - 3 V
