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Gain: 11.5 dB
Technology: GaN
Output Power: 180 W
Mounting Style: Screw Mount
Development Kit: CGHV50200F-AMP
Transistor Type: GaN HEMT
Transistor Polarity: N-Channel
Maximum Operating Frequency: 5 GHz
Minimum Operating Frequency: 4.4 GHz
Id - Continuous Drain Current: 17 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 40 C
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Vds - Drain-Source Breakdown Voltage: 150 V
Vgs th - Gate-Source Threshold Voltage: - 3.4 V
