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Gain: 18 dB
Technology: GaN
Output Power: 170 W
Mounting Style: SMD/SMT
Transistor Type: GaN HEMT
Number of Channels: 8 Channel
Transistor Polarity: N-Channel
Maximum Operating Frequency: 6 GHz
Minimum Operating Frequency: 0 Hz
Id - Continuous Drain Current: 12.6 A
Vds - Drain-Source Breakdown Voltage: 50 V
