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MACOM GTVA104001FA-V1-R0 GaN FETs GaN HEMT 50V 0.9-1.2GHz 400W | EMIN.COM.MM

GaN FETs
MACOM GTVA104001FA-V1-R0 GaN FETs GaN HEMT 50V 0.9-1.2GHz 400W

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MACOM GTVA104001FA-V1-R0 GaN FETs GaN HEMT 50V 0.9-1.2GHz 400W

ManufacturerMACOM(View more products from this manufacturer)

ModelGTVA104001FA-V1-R0

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Gain: 19 dB

Technology: GaN

Output Power: 400 W

Mounting Style: Screw Mount

Development Kit: LTN/GTVA104001FA-V1

Transistor Type: GaN HEMT

Transistor Polarity: N-Channel

Maximum Operating Frequency: 1.215 GHz

Minimum Operating Frequency: 960 MHz

Id - Continuous Drain Current: 4.6 A

Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: - 3 V

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