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Gain: 13.5 dB
Technology: Si
Output Power: 400 W
Mounting Style: Screw Mount
Transistor Type: LDMOS FET
Number of Channels: 1 Channel
Operating Frequency: 2.62 GHz to 2.69 GHz
Transistor Polarity: N-Channel
Vgs - Gate-Source Voltage: - 6 V to + 10 V
Maximum Operating Temperature: + 225 C
Rds On - Drain-Source Resistance: 80 mOhms
Vds - Drain-Source Breakdown Voltage: 65 V
