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Technology: Si
Unit Weight: 9 mg
Channel Mode: Enhancement
Mounting Style: SMD/SMT
Number of Channels: 2 Channel
Transistor Polarity: N-Channel, P-Channel
Pd - Power Dissipation: 150 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Id - Continuous Drain Current: 340 mA, 180 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 5.3 Ohms, 10 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V, 50 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V, 2 V
