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Gain: 16 dB
Technology: Si
Unit Weight: 38 g
Output Power: 300 W
Mounting Style: Through Hole
Number of Channels: 1 Channel
Operating Frequency: 45 MHz
Transistor Polarity: N-Channel
Pd - Power Dissipation: 357 W
Vgs - Gate-Source Voltage: + 30 V
Id - Continuous Drain Current: 13 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Forward Transconductance - Min: 3.3 mS
Rds On - Drain-Source Resistance: 1 Ohms
Vds - Drain-Source Breakdown Voltage: 1 kV
Vgs th - Gate-Source Threshold Voltage: 4 V
