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Microsemi APT200GN60J Trans IGBT Chip N-CH 600V 283A 682000mW 4-Pin SOT-227 | EMIN.COM.MM

Discrete & Power Modules
Microsemi APT200GN60J Trans IGBT Chip N-CH 600V 283A 682000mW 4-Pin SOT-227

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Microsemi APT200GN60J Trans IGBT Chip N-CH 600V 283A 682000mW 4-Pin SOT-227

ManufacturerMicrosemi(View more products from this manufacturer)

ModelAPT200GN60J

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Field-effect transistor type: N

Maximum operating temperature: 175C

Minimum operating temperature: -55C

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