Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Vgs(th): 4 V
Vgs (Max): 30V
Gate Charge (Qg): 495nC
Power consumption: 500W
Technology System: MOSFET(Metal Oxide)
Drain to Source voltage: 200V
Continuous drain current: 112A
Input Capacitance (Ciss): 11640pF
Operating temperature range: -55 to 150C
Field-effect transistor type: N-CH
Drain to Source on-state resistance: 19mOhm
Drive Voltage (Max Rds On, Min Rds On): 10V
