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Technology: Si
Configuration: Single
Mounting Style: Through Hole
Transistor Polarity: NPN
DC Current Gain hFE Max: 75
Collector- Base Voltage VCBO: 300 V
Continuous Collector Current: 5 A
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: + 200 C
DC Collector/Base Gain hfe Min: 25
Collector- Emitter Voltage VCEO Max: 300 V
