Get exclusive volume discounts, bulk pricing updates, and new product alerts delivered directly to your inbox.
By subscribing, you agree to our Terms of Service and Privacy Policy.
Direct access to our certified experts
Width: 1.7 mm
Height: 1 mm
Length: 3.1 mm
Technology: Si
Unit Weight: 10.800 mg
Configuration: Dual
Mounting Style: SMD/SMT
Transistor Polarity: NPN
Pd - Power Dissipation: 250 mW
DC Current Gain hFE Max: 200 at 2 mA, 5 V
Gain Bandwidth Product fT: 100 MHz
Emitter- Base Voltage VEBO: 6 V
Collector- Base Voltage VCBO: 80 V
Continuous Collector Current: 100 mA
Maximum DC Collector Current: 100 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
DC Collector/Base Gain hfe Min: 300
Collector- Emitter Voltage VCEO Max: 65 V
Collector-Emitter Saturation Voltage: 200 mV
