Nexperia BCP55-10-QX BJTs - Bipolar Transistors 60 V, 1 A NPN medium power transistors

Technology: Si

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.35 W

DC Current Gain hFE Max: 160 at 150 mA,2 V

Gain Bandwidth Product fT: 180 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1 A

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 63 at 150 mA,2 V

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 500 mV