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Nexperia MJD148-QJ BJTs - Bipolar Transistors 45 V, 4 A NPN high power bipolar transistor

Name: Nexperia MJD148-QJ BJTs - Bipolar Transistors 45 V, 4 A NPN high power bipolar transistor
Brand: Nexperia

ModelMJD148-QJ

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 1.6 W

DC Current Gain hFE Max: 375 at 500 mA, 1 V

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 6 V

Continuous Collector Current: 4 A

Maximum DC Collector Current: 7 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 85 at 500 mA, 1 V

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 500 mV