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Nexperia MJD42C-QJ BJTs - Bipolar Transistors 100 V, 6 A PNP high power bipolar transistor

Name: Nexperia MJD42C-QJ BJTs - Bipolar Transistors 100 V, 6 A PNP high power bipolar transistor
Brand: Nexperia

ModelMJD42C-QJ

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Technology: Si

REACH - SVHC: Details

Configuration: Single

Qualification: AEC-Q101

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 1.6 W

Gain Bandwidth Product fT: 3 MHz

Emitter- Base Voltage VEBO: 6 V

Continuous Collector Current: 6 A

Maximum DC Collector Current: 10 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 15 at - 3 A, - 4 V

Collector- Emitter Voltage VCEO Max: 100 V

Collector-Emitter Saturation Voltage: 1.5 V